Title: Integrated Power Devices and TCAD Simulation Author: Johnny K.O. Sin, Wai Tung Ng, Yue Fu, Zhanming Li ISBN: 1138071854 / 9781138071858 Format: Soft Cover Pages: 368 Publisher: CRC Press Year: 2014 Availability: 2 to 3 weeks
Description
Contents
This book is about the introduction of power IC, the BCD technology with a focus on TCAD simulation applications. Readers will be able to get a complete picture of what is power IC technology, how to realize the integration, how to design the individual power devices using TCAD, as well as a deep understanding of TCAD simulation methods. The book introduces GaN HEMT, which is considered as a shining star for tomorrow's high voltage technology.
Preface
Part I : Introduction
Chapter 1 : From Power Electronics to Power Semiconductor Devices Chapter 2 : The Semiconductor Industry and More Than Moore Chapter 3 : What You Can Get from This Book and The Chapter Arrangement
Part II : Smart Power ICS and Their Applications
Chapter 4 : Introduction to Power IC and Power SOC Chapter 5 : Integrated Power Electronics, Power Conversion, and Power Management Chapter 6 : Discrete and Integrated Power Semiconductor Devices Chapter 7 : Smart Power IC Fabrication Technologies
Part III : Evolution of Power Devices and Power ICS
Chapter 8 : Power Devices, A Historical Perspective Chapter 9 : Power IC Technology Evolution Chapter 10 : Power IC, A Survey of Different Technologies
Part IV : Power ICS Process Flow and Process Integration
Chapter 11 : Dedicated and CMOS Compatible Smart Power IC Fabrication Technologies Chapter 12 : A CMOS Compatible Process Flow for Smart Power IC Chapter 13 : Lateral Power Device Characteristics, On-Resistance, Breakdown Voltage and Ruggedness Chapter 14 : Heat Flow and Thermal Conductivity Chapter 15 : Isolation, Minority Carrier Injection, Substrate Leakage and Prevention Chapter 16 : Reliability Consideration and Packaging
Part V : Introduction to Technology Computer Aided Design (TCAD)
Chapter 17 : What is TCAD, Why Do We Need TCAD Chapter 18 : How TCAD is Used in Various Stages of Technology Development Chapter 19 : TCAD Models and Methods for Process Simulation Chapter 20 : TCAD Models and Methods for Device Simulation Chapter 21 : About 3D TCAD Simulation
Part VI : TCAD Simulation of Integrated Power Semiconductor Devices
Chapter 22 : Integrated Diodes and Zener Diodes Chapter 23 : Integrated LDMOS, UMOS and Superjunction LDMOS Chapter 24 : Integrated BJT Devices Chapter 25 : Integrated Capacitors and Resistors Chapter 26 : Integrated Inductors and Transformers Chapter 27 : Other Components, Digital MOSFET, Analog MOSFET, Anti-Fuse Chapter 28 : Thermal Simulation and Self Heating Chapter 29 : Hybrid, Mixed-Signal Simulation
Part VII : Introduction to Gan HEMT and The Possibility of Silicon Integration
Chapter 30 : Gan Advantages Chapter 31 : Enhancement Mode and Depletion Mode HEMT Power Devices Chapter 32 : Substrate of Choice and Possible Integration With Silicon